Carbon nanotubes are ideal candidates for building blocks of future
electronic nanodevices. Although formidable obstacles remain,
nanotube based field-effect transistors and other nano-electronic
devices have already been demonstrated. However, the main technical
problem in such nanotube-based devices is the high energy barrier
(i.e. the Schottky barrier) at the metal-nanotube contact
that hinders electrons entering the nanotube from a metal
connecting wire. Therefore we'll overcome this key
problem quicker if we have a good understanding of the
nature of nanotube-metal contact and the origin of the
Schottky barrier, Vs .
Our calculations indicate that the electronic structure and
the potential of a semiconducting nanotube side-contacted
on metal electrodes (see figure below) depend strongly on
the type of metal, and exhibits marked differences from those
of metal-Si heterostructures, which are known to be insensitive
to the type of metal. The calculations are performed using
first-principles pseudo-potential plane wave method within
the density functional theory and the generalized gradient
approximation. The metal-nanotube contact is simulated in a
supercell approach, consisting of five layers of metals and the
(8,0) carbon nanotube as shown in the figure.
The atomic positions and the lattice parameters are
relaxed during the self-consistent calculations.
Mo and Au metals are studied as an example of two
ends of the metal-electrode spectrum.
The calculations indicate that the nanotube-Au slab forms a very weakly bounded system with a sizable potential barrier between the tube and metal electrode, V ~3.9 eV, that is comparable with the calculated work function (V ~ 5 eV) of the Au slab. The effect of the nanotube-metal contact on the electronic properties and charge density are minimal as shown in the top inset to figure. These findings, explains why the devices made from Au electrodes have high contact resistance. Because of weak coupling and hence large V, the nanotube-Au contact is reminiscent of the metal-oxide-semiconductor junctions. We also studied the effect of the radial deformation of the nanotube and found that upon radial deformation, the nanotube-metal contact distance decreases and eventually the potential barrier, Vs, collapses.
For the case of nanotube side-bonded to the Mo (110) surface, the situation is totally different. For this case, the interaction is found very strong, as evident by the C-Mo hybridization shown in the charge contour plot (see figure). Moreover, a partial density of state analysis indicates C-Mo bond states near the Fermi level. This suggests that the site of the nanotube at the interface is conducting, while the opposite site farthest from the contact remains semiconducting. Finally the contact barrier is estimated to be around 0.4 eV, much smaller than that of Au-contact.
In conclusion, our work indicates that the type of metals used in an electrode is very important in determining the contact resistance. Other metals and alloys, and in particular, spin-polarized metal electrodes in connection with spintronics, are under current study. The theoretical studies such as our work will be important in pointing out the paths for other researchers to follow in experiments that pursue opportunities to make new nanodevices using carbon nanotubes as the building blocks.
The work was supported by grants from the National Science Foundation and the Scientific and Technical Research Council of Turkey.
``TOP: A side and top view of a hydrogenated (8,0) SWNT at half
coverage. The black and gray represent carbon and hydrogen atoms,
respectively. Note that the fully optimized structure has a
rectangular cross section.
BOTTOM: The electronic density of states (DOS),
indicating a very large number of states at the Fermi level.
Hence, hydrogentation of an insulating (8,0) SWNT at half
coverage induce metallization. The dotted line
shows the contribution to the DOS from hydrogen atoms.''
"A schematic view of the M8-nanoring coated
on a (8,0) nanotube (where M=metal such as Al,
forming a magnetic tip due to a large
persistent current in the nanoring''
`` A quantum-well structure formed from a
(8,0) nanotube by periodic hydrogenation. Controlling
length and H-concentration, one can tune the parameters
l0 and V0 which determine the properties
of the nanodevice.