Applications of Combinatorial Materials Science in Silicon Microelectronics
Martin Green, Ceramics Division
The Si microelectronics community is currently faced with major materials
challenges to further scaling. The SiO2/polycrystalline Si gate stack that
has served the industry for 35 years must now be entirely replaced with one
having a higher capacitance and lower power dissipation. At a minimum, the
interfaces of the new gate stack, (HfO2/metal, for example), must be
thermally stable with respect to interfacial reactions, and the changes in
electrical properties that would ensue. In this talk, I will describe
research aimed at understanding the thermal as well as electrical stability
of metal gate electrode layers on HfO2, a likely high-k gate dielectric.
Combinatorial methodologies, ideally suited for this problem since a wide
variety of metal electrode layers will be examined, will be utilized to
determine the ideal composition and structure of the metal gate electrode.
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